IPP90R1K2C3 Datasheet, PDF (5/10 Pages) Infineon Technologies AG – CoolMOS™ Power Transistor

5 Typ. output characteristics
I _D=f(V _DS); T _J=150 °C
parameter: V _GS
7
6
5
4
3
2
1
IPP90R1K2C3
6 Typ. drain-source on-state resistance
R _DS(on)=f(I _D); T _J=150 °C
parameter: V _GS
20 V
10 V
8V
6V
5.5 V
5V
4.5 V
4V
14
12
10
8
10 V
6
5V
4.8 V
4
4.5 V
4V
2
0
0
5
10
15
20
V _DS [V]
7 Drain-source on-state resistance
R _DS(on)=f(T _J); I _D=2.8 A; V _GS=10 V
3.5
0
25
0
2
4
6
I _D [A]
8 Typ. transfer characteristics
I _D=f(V _GS); V _DS=20V
parameter: T _J
15
8
10
3
25 °C
2.5
10
2
1.5
98 %
typ
1
150 °C
5
0.5
0
-60
-20
20
60 100 140 180
T _j [°C]
0
0
2
4
6
8
10
V _GS [V]
Rev. 1.0
page 5
2008-07-30