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| IPP05CN10N Datasheet, PDF (5/11 Pages) Infineon Technologies AG – OptiMOS®2 Power-Transistor | |||
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1 Power dissipation
P tot=f(T C)
IPB05CN10N G IPI05CN10N G
IPP05CN10N G
2 Drain current
I D=f(T C); V GSâ¥10 V
350
120
300
100
250
80
200
60
150
40
100
20
50
0
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
103
limited by on-state
resistance
102
10 ms
DC
1 µs
10 µs
100 µs
1 ms
101
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
100
0.5
10-1 0.2
0.1
0.05
0.02
0.01
10-2
single pulse
100
10-1
Rev. 1.05
100
101
102
V DS [V]
10-3
103
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 5
2006-06-02
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