IPN50R2K0CE Datasheet, PDF (5/13 Pages) Infineon Technologies AG – 500V CoolMOSª CE Power Transistor

500VCoolMOSªCEPowerTransistor
IPN50R2K0CE
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
VSD
Reverse recovery time
trr
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Min.
-
-
-
-
Values
Typ. Max.
0.83 -
110 -
0.35 -
5.2 -
Unit Note/TestCondition
V VGS=0V,IF=0.8A,Tf=25°C
ns VR=400V,IF=0.8A,diF/dt=100A/µs
µC VR=400V,IF=0.8A,diF/dt=100A/µs
A VR=400V,IF=0.8A,diF/dt=100A/µs
Final Data Sheet
5
Rev.2.1,2016-06-13