IPL60R104C7 Datasheet, PDF (5/14 Pages) Infineon Technologies AG – 600V CoolMOSª C7 Power Transistor

600VCoolMOSªC7PowerTransistor
IPL60R104C7
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V(BR)DSS
V(GS)th
IDSS
IGSS
RDS(on)
RG
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Effective output capacitance, energy
related¹⁾
Effective output capacitance, time
related²⁾
Turn-on delay time
Ciss
Coss
Co(er)
Co(tr)
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
Min.
600
3
-
-
-
-
-
-
Values
Typ. Max.
-
-
3.5 4
-
1
10 -
-
100
0.090 0.104
0.200 -
0.82 -
Unit
V
V
µA
nA
Ω
Ω
Note/TestCondition
VGS=0V,ID=1mA
VDS=VGS,ID=0.49mA
VDS=600,VGS=0V,Tj=25°C
VDS=600,VGS=0V,Tj=150°C
VGS=20V,VDS=0V
VGS=10V,ID=9.7A,Tj=25°C
VGS=10V,ID=9.7A,Tj=150°C
f=1MHz,opendrain
Min.
-
-
Values
Typ. Max.
1819 -
33 -
Unit Note/TestCondition
pF VGS=0V,VDS=400V,f=250kHz
pF VGS=0V,VDS=400V,f=250kHz
-
62 -
pF VGS=0V,VDS=0...400V
-
641 -
pF ID=constant,VGS=0V,VDS=0...400V
-
11.8 -
ns
VDD=400V,VGS=13V,ID=9.7A,
RG=5.3Ω;seetable9
-
8
-
ns
VDD=400V,VGS=13V,ID=9.7A,
RG=5.3Ω;seetable9
-
48 -
ns
VDD=400V,VGS=13V,ID=9.7A,
RG=5.3Ω;seetable9
-
8
-
ns
VDD=400V,VGS=13V,ID=9.7A,
RG=5.3Ω;seetable9
Min.
-
-
-
-
Values
Typ. Max.
9
-
14 -
42 -
5.0 -
Unit Note/TestCondition
nC VDD=400V,ID=9.7A,VGS=0to10V
nC VDD=400V,ID=9.7A,VGS=0to10V
nC VDD=400V,ID=9.7A,VGS=0to10V
V VDD=400V,ID=9.7A,VGS=0to10V
1)_{Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V}
2)_{Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V}
Final Data Sheet
5
Rev.2.0,2015-12-11