IPI90R500C3 Datasheet, PDF (5/10 Pages) Infineon Technologies AG – CoolMOS™ Power Transistor

5 Typ. output characteristics
I _D=f(V _DS); T _J=150 °C
parameter: V _GS
15
20 V
10 V
8V
6V
5V
IPI90R500C3
6 Typ. drain-source on-state resistance
R _DS(on)=f(I _D); T _J=150 °C
parameter: V _GS
10
8
10
4.5 V
6
4
10 V
5
4V
5V
2
4.8 V
4.5 V
4V
0
0
5
10
15
20
25
V _DS [V]
0
0
5
10
15
20
25
I _D [A]
7 Drain-source on-state resistance
R _DS(on)=f(T _J); I _D=6.6 A; V _GS=10 V
1.5
8 Typ. transfer characteristics
I _D=f(V _GS); V _DS=20V
parameter: T _J
35
25 °C
30
1.2
25
0.9
20
0.6
98 %
typ
0.3
15
150 °C
10
5
0
-60
-20
20
60 100 140 180
T _J [°C]
0
0
2
4
6
8
10
V _GS [V]
Rev. 1.0
page 5
2008-07-29