IPI057N08N3G Datasheet, PDF (5/11 Pages) Infineon Technologies AG – OptiMOS 3 Power-Transistor Features N-channel, normal level

5 Typ. output characteristics
I _D=f(V _DS); T _j=25 °C
parameter: V _GS
320
10 V ^{8 V}
280
7V
6.5 V
240
200
160
6V
120
5.5 V
80
5V
40
4.5 V
0
0
1
2
3
4
V _DS [V]
7 Typ. transfer characteristics
I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max
parameter: T _j
180
IPP057N08N3 G IPI057N08N3 G
IPB054N08N3 G
6 Typ. drain-source on resistance
R _DS(on)=f(I _D); T _j=25 °C
parameter: V _GS
20
16
4.5 V
5V
12
5.5 V
8
6V
6.5 V
7V
8V
4
10 V
0
5
0
40
80
120
160
I _D [A]
8 Typ. forward transconductance
g _fs=f(I _D); T _j=25 °C
160
150
120
120
90
80
60
175 °C
25 °C
40
30
0
0
Rev. 1.0
2
4
6
V _GS [V]
0
8
0
page 5
40
80
120
160
I _D [A]
2008-01-25