IPD90N06S3L-07 Datasheet, PDF (5/9 Pages) Infineon Technologies AG – OptiMOS-T Power-Transistor

IPD90N06S3L-07
5 Typ. output characteristics
I _D = f(V _DS); T _j = 25 °C
parameter: V _GS
200
10 V
175
6V
150
5.5 V
125
100
5V
75
4.5 V
50
4V
25
3.5 V
0
0
2
4
6
V _DS [V]
7 Typ. transfer characteristics
I _D = f(V _GS); V _DS = 4 V
parameter: T _j
160
6 Typ. drain-source on-state resistance
R _DS(on) = f(I _D); T _j = 25 °C
parameter: V _GS
20
4V
5V
18
16
6V
14
12
10
8V
8
10 V
6
4
2
8
10
0
0 20 40 60 80 100 120 140 160
I _D [A]
8 Typ. drain-source on-state resistance
R _DS(on) = f(T _j); I _D = 43 A; V _GS = 10 V
12
140
-55 °C
120
10
100
25 °C
175 °C
80
8
60
40
6
20
0
0
1
2
3
4
5
6
V _GS [V]
4
-60 -20
20
60 100 140 180
T _j [°C]
Rev. 1.1
page 5
2009-05-20