IPD90N06S3L-05 Datasheet, PDF (5/9 Pages) Infineon Technologies AG – OptiMOS-T Power-Transistor

IPD90N06S3L-05
5 Typ. output characteristics
I _D = f(V _DS); T _j = 25 °C
parameter: V _GS
360
10 V
320
280
240
200
160
120
80
40
0
0
2
4
6
V _DS [V]
7 Typ. transfer characteristics
I _D = f(V _GS); V _DS = 4 V
parameter: T _j
160
140
120
100
6 Typ. drain-source on-state resistance
R _DS(on) = f(I _D); T _j = 25 °C
parameter: V _GS
12
4V
5V
10
6.5 V
6V
8
6V
5.5 V
6
8V
5V
4.5 V
4V
3.5 V
8
10
4
10 V
2
0
0 20 40 60 80 100 120 140 160
I _D [A]
8 Typ. drain-source on-state resistance
R _DS(on) = f(T _j); I _D = 60 A; V _GS = 10 V
8
-55 °C
25 °C
175 °C
6
80
60
4
40
20
0
0
1
2
3
4
5
6
V _GS [V]
2
-60 -20
20
60 100 140 180
T _j [°C]
Rev. 1.1
page 5
2007-11-07