IPD90N04S4-04 Datasheet, PDF (5/9 Pages) Infineon Technologies AG – OptiMOS-T2 Power-Transistor

IPD90N04S4-04
5 Typ. output characteristics
I _D = f(V _DS); T _j = 25 °C
parameter: V _GS
240
6 Typ. drain-source on-state resistance
R _DS(on) = f(I _D); T _j = 25 °C
parameter: V _GS
15
200
10 V
160
120
80
40
0
0
1
2
V _DS [V]
7 Typ. transfer characteristics
I _D = f(V _GS); V _DS = 6V
parameter: T _j
200
7V
13
5.5 V
6V
6.5 V
11
6.5 V
9
7
6V
7V
5
5.5 V
10 V
3
5V
1
3
4
0
40
80
120
I _D [A]
8 Typ. drain-source on-state resistance
R _DS(on) = f(T _j); I _D = 90 A; V _GS = 10 V
6.5
6
150
5.5
5
100
4.5
50
0
3
175 °C
25 °C
-55 °C
4
5
6
V _GS [V]
4
3.5
3
2.5
7
-60 -20 20
60 100 140 180
T _j [°C]
Rev. 1.0
page 5
2010-04-06