IPD031N06L3G Datasheet, PDF (5/9 Pages) Infineon Technologies AG – OptiMOS(TM)3 Power-Transistor

IPD031N06L3 G
5 Typ. output characteristics
I _D=f(V _DS); T _j=25 °C
parameter: V _GS
400
360
6V
10 V
5V
320
4.5 V
280
6 Typ. drain-source on resistance
R _DS(on)=f(I _D); T _j=25 °C
parameter: V _GS
12
3V
3.5 V
4V
9
4.5 V
240
200
4V
6
160
120
5V
3.5 V
3
6V
80
10 V
40
3V
0
0
1
2
3
4
5
V _DS [V]
0
0 50 100 150 200 250 300 350 400
I _D [A]
7 Typ. transfer characteristics
I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max
parameter: T _j
320
8 Typ. forward transconductance
g _fs=f(I _D); T _j=25 °C
200
160
240
120
160
80
80
40
175 °C
25 °C
0
0
0
1
2
3
4
5
0
V _GS [V]
Rev. 2.0
page 5
50
100
I _D [A]
150
2008-12-09