IPB90N04S4-02 Datasheet, PDF (5/9 Pages) Infineon Technologies AG – OptiMOS-T2 Power-Transistor

5 Typ. output characteristics
I _D = f(V _DS); T _j = 25 °C; SMD
parameter: V _GS
360
10 V
7V
300
240
180
120
60
0
0
1
2
V _DS [V]
7 Typ. transfer characteristics
I _D = f(V _GS); V _DS = 6V
parameter: T _j
360
IPB90N04S4-02
IPI90N04S4-02, IPP90N04S4-02
6 Typ. drain-source on-state resistance
R _DS(on) = f(I _D); T _j = 25 °C; SMD
parameter: V _GS
8
5.5 V
6.5 V
7
6
6V
5
4
5.5 V
3
5V
2
6V
6.5 V
7V
10 V
1
3
4
0
40
80
120
160
I _D [A]
8 Typ. drain-source on-state resistance
R _DS(on) = f(T _j); I _D = 90 A; V _GS = 10 V; SMD
3.5
300
240
180
120
60
0
3
Rev. 1.1
3
2.5
175 °C
25 °C
-55 °C
4
5
6
V _GS [V]
2
1.5
1
7
-60 -20 20
60 100 140 180
T _j [°C]
page 5
2010-07-01