IPB80P04P4L-06 Datasheet, PDF (5/9 Pages) Infineon Technologies AG – OptiMOS-P2 Power-Transistor

5 Typ. output characteristics
I _D = f(V _DS); T _j = 25 °C; SMD
parameter: V _GS
320
-10V
240
160
80
0
0
1
2
3
4
-V _DS [V]
7 Typ. transfer characteristics
I _D = f(V _GS); V _DS = -6V
parameter: T _j
320
25 °C
-55 °C 175 °C
240
Final Data Sheet
IPB80P04P4L-06
IPI80P04P4L-06, IPP80P04P4L-06
6 Typ. drain-source on-state resistance
R _DS(on) = (I _D); T _j = 25 °C; SMD
parameter: V _GS
25
-3V
-3.2V
-5V
-3.5V
20
-4.5V
15
10
-4V
5
-3.5V
-4V
-4.5V
-5V
-7V
-10V
-3V
-2.8V
5
6
0
0
40
80
-I _D [A]
8 Typ. drain-source on-state resistance
R _DS(on) = f(T _j); I _D = -80 A; V _GS = -10 V; SMD
9
8
7
160
6
80
5
0
2
3
4
5
6
7
8
-V _GS [V]
4
-60 -20 20
60 100 140 180
T _j [°C]
Rev. 1.0
page 5
2011-02-14