IPB80N06S4L-07 Datasheet, PDF (5/9 Pages) Infineon Technologies AG – OptiMOS-T2 Power-Transistor

5 Typ. output characteristics
I _D = f(V _DS); T _j = 25 °C; SMD
parameter: V _GS
320
10 V
280
IPB80N06S4L-07
IPI80N06S4L-07, IPP80N06S4L-07
6 Typ. drain-source on-state resistance
R _DS(on) = f(I _D); T _j = 25 °C; SMD
parameter: V _GS
14
6V
4V
4.5 V
5V
240
12
200
5V
10
160
4.5 V
120
8
6V
4V
80
6
40
10 V
0
4
0
1
2
3
4
5
6
0
V _DS [V]
80
160
240
320
I _D [A]
7 Typ. transfer characteristics
I _D = f(V _GS); V _DS = 6V
parameter: T _j
8 Typ. drain-source on-state resistance
R _DS(on) = f(T _j); I _D = 80 A; V _GS = 10 V; SMD
320
10
-55 °C
25 °C
280
9
240
8
200
175 °C
7
160
6
120
80
5
40
4
0
0
1
2
3
4
5
6
V _GS [V]
3
-60 -20
20
60 100 140 180
T _j [°C]
Rev. 1.0
page 5
2009-03-24