IPB80N03S4L-02 Datasheet, PDF (5/9 Pages) Infineon Technologies AG – OptiMOS-T2 Power-Transistor

5 Typ. output characteristics
I _D = f(V _DS); T _j = 25 °C; SMD
parameter: V _GS
360
320
10 V
4.5 V
5V
IPB80N03S4L-02
IPI80N03S4L-03, IPP80N03S4L-03
6 Typ. drain-source on-state resistance
R _DS(on) = f(I _D); T _j = 25 °C; SMD
parameter: V _GS
10
3V
4V
9
3.5 V
280
8
240
7
200
3.5 V
6
160
5
120
80
40
0
0
4
3V
3
2
2.5 V
1
2
3
V _DS [V]
1
4
0
4V
4.5 V
5V
10 V
50
100
150
200
I _D [A]
7 Typ. transfer characteristics
I _D = f(V _GS); V _DS = 6V
parameter: T _j
8 Typ. drain-source on-state resistance
R _DS(on) = f(T _j); I _D = 80 A; V _GS = 10 V; SMD
350
3.5
-55 °C
25 °C
175 °C
300
3
250
200
2.5
150
2
100
1.5
50
0
1
1
2
3
4
5
-60 -20 20
60 100 140 180
V _GS [V]
T _j [°C]
Rev. 2.0
page 5
2007-03-09