IPB22N03S4L-15 Datasheet, PDF (5/9 Pages) Infineon Technologies AG – OptiMOS-T2 Power-Transistor

5 Typ. output characteristics
I _D = f(V _DS); T _j = 25 °C, SMD
parameter: V _GS
80
70
10 V
5V
4.5 V
60
IPB22N03S4L-15
IPI22N03S4L-15, IPP22N03S4L-15
6 Typ. drain-source on-state resistance
R _DS(on) = f(I _D); T _j = 25 °C, SMD
parameter: V _GS
50
3.5 V
4V
45
4.5 V
40
50
35
4V
40
30
30
20
10
0
0
25
3.5 V
20
3V
15
2.5 V
1
2
3
V _DS [V]
10
4
0
5V
10 V
20
40
60
80
I _D [A]
7 Typ. transfer characteristics
I _D = f(V _GS); V _DS = 6V
parameter: T _j
8 Typ. drain-source on-state resistance
R _DS(on) = f(T _j); I _D = 22 A; V _GS = 10 V, SMD
80
22
-55 °C _{25 °C}
20
175 °C
60
18
16
40
14
20
0
1
2
3
4
V _GS [V]
12
10
8
5
-60 -20
20
60 100 140 180
T _j [°C]
Rev. 2.0
page 5
2007-03-09