IPB180N04S4-01 Datasheet, PDF (5/9 Pages) Infineon Technologies AG – OptiMOS-T2 Power-Transistor

IPB180N04S4-01
5 Typ. output characteristics
I _D = f(V _DS); T _j = 25 °C
parameter: V _GS
600 ^{10 V 7 V}
500
400
300
200
100
0
0
2
4
V _DS [V]
7 Typ. transfer characteristics
I _D = f(V _GS); V _DS = 6V
parameter: T _j
720
630
540
450
360
270
180
175 °C
90
25 °C
-55 °C
0
2
3
4
5
6
V _GS [V]
Rev. 1.0
6 Typ. drain-source on-state resistance
R _DS(on) = (I _D); T _j = 25 °C
parameter: V _GS
14
6.5 V
12
5.5 V
6V
6V
6.5 V
10
8
6V
6
5.5 V
4
2
5V
7V
10 V
0
6
0 100 200 300 400 500 600
I _D [A]
8 Typ. drain-source on-state resistance
R _DS(on) = f(T _j); I _D = 100 A; V _GS = 10 V
2
1.5
1
7
8
0.5
-60 -20 20 60 100 140 180
T _j [°C]
page 5
2010-04-13