IPB13N03LB Datasheet, PDF (5/9 Pages) Infineon Technologies AG – OptiMOS®2 Power-Transistor

5 Typ. output characteristics
I _D=f(V _DS); T _j=25 °C
parameter: V _GS
100
IPB13N03LB
6 Typ. drain-source on resistance
R _DS(on)=f(I _D); T _j=25 °C
parameter: V _GS
80
90
80
10 V
70
60
50
4.5 V
4.1 V
70
3.2V
3.8 V
60
3V
3.5 V
50
4.1 V
40
4.5 V
40
30
20
10
0
0
1
2
V _DS [V]
3.8 V
3.5 V
3.2 V
3V
2.8 V
3
30
20
10
0
0
10 V
20
40
60
80
100
I _D [A]
7 Typ. transfer characteristics
I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max
parameter: T _j
100
8 Typ. forward transconductance
g _fs=f(I _D); T _j=25 °C
70
90
60
80
70
50
60
40
50
40
30
30
20
10
175 °C
25 °C
0
0
1
2
3
4
5
V _GS [V]
20
10
0
0
20
40
60
80
I _D [A]
Rev. 0.93
page 5
2006-05-10