IPB052N04NG Datasheet, PDF (5/9 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor

5 Typ. output characteristics
I _D=f(V _DS); T _j=25 °C
parameter: V _GS
250
10 V
200
150
100
50
0
0
1
2
V _DS [V]
7 Typ. transfer characteristics
I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max
parameter: T _j
250
IPB052N04N G
6 Typ. drain-source on resistance
R _DS(on)=f(I _D); T _j=25 °C
parameter: V _GS
12
7V
6.5 V
10
5.5 V
6V
8
6
6.5 V
7V
4
10 V
6V
5.5 V
2
5V
3
0
0
40
80
120
160
200
I _D [A]
8 Typ. forward transconductance
g _fs=f(I _D); T _j=25 °C
100
200
80
150
60
100
40
50
0
0
Rev. 2.0
175 °C
25 °C
2
4
6
V _GS [V]
20
0
8
0
page 5
20
40
60
80
100
I _D [A]
2010-04-22