IPB04N03LB Datasheet, PDF (5/9 Pages) Infineon Technologies AG – OptiMOS®2 Power-Transistor

5 Typ. output characteristics
I _D=f(V _DS); T _j=25 °C
parameter: V _GS
140
120
4.5 V
10 V
4.1 V
100
80
IPB04N03LB
6 Typ. drain-source on resistance
R _DS(on)=f(I _D); T _j=25 °C
parameter: V _GS
25
3.8 V
2.8V 3 V
3.2 V
3.5 V
20
3.8 V
3.5 V
15
60
40
20
0
0
1
2
V _DS [V]
7 Typ. transfer characteristics
I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max
parameter: T _j
160
10
3.2 V
3V
5
2.8 V
4.1 V
4.5 V
10 V
0
3
0 20 40 60 80 100 120 140
I _D [A]
8 Typ. forward transconductance
g _fs=f(I _D); T _j=25 °C
140
140
120
120
100
100
80
80
60
60
40
40
175 °C
20
25 °C
0
0
1
2
3
4
5
V _GS [V]
20
0
0
Rev. 0.94
page 5
20
40
60
80
I _D [A]
2006-05-10