IGZ50N65H5 Datasheet, PDF (5/13 Pages) Infineon Technologies AG – 650V IGBT high speed series fifth generation

IGZ50N65H5
Highspeedseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance¹⁾
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes
VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=520V,IC=50.0A,
VGE=15V
LE
Value
Unit
min. typ. max.
- 3100 -
-
53
- pF
-
11
-
- 109.0 - nC
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=25°C,
VCC=400V,IC=25.0A,
VGE=0.0/15.0V,
RG(on)=12.0Ω,RG(off)=20.0Ω,
Lσ=30nH,Cσ=25pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery. Diode
from IKZ50N65EH5.
Value
Unit
min. typ. max.
-
20
- ns
-
7
- ns
- 250 - ns
-
21
- ns
- 0.41 - mJ
- 0.19 - mJ
- 0.60 - mJ
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=150°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=150°C,
VCC=400V,IC=25.0A,
VGE=0.0/15.0V,
RG(on)=12.0Ω,RG(off)=20.0Ω,
Lσ=30nH,Cσ=25pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery. Diode
from IKZ50N65EH5.
Value
Unit
min. typ. max.
-
19
- ns
-
8
- ns
- 292 - ns
-
19
- ns
- 0.67 - mJ
- 0.27 - mJ
- 0.94 - mJ
1) _{The internal emitter inductance does not affect the gate control circuitry if bypassed by using the emitter sense pin.}
5
Rev.2.1,2014-10-31