IGP50N60T Datasheet, PDF (5/13 Pages) Infineon Technologies AG – LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY

IGP50N60T, IGB50N60T
TrenchStop Series
IGW50N60T
120A
100A ^VGE=20V
15V
80A
13V
11V
60A
9V
7V
40A
20A
0A
0V
1V
2V
3V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(T_j = 25°C)
120A
100A ^VGE=20V
15V
80A
13V
11V
60A
9V
7V
40A
20A
0A
0V
1V
2V
3V
4V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(T_j = 175°C)
80A
60A
40A
20A
T _J= 1 7 5 °C
25°C
0A
0V
2V
4V
6V
8V
V_GE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(V_CE=20V)
2.5V
2.0V
1.5V
1.0V
I_C=100A
I_C=50A
I_C=25A
0.5V
0.0V
0°C
50°C
100°C
150°C
T_J, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(V_GE = 15V)
Power Semiconductors
5
Rev. 2.2 Dec-04