IDW60C65D1 Datasheet, PDF (5/11 Pages) Infineon Technologies AG – Emitter Controlled Diode Rapid 1 Common Cathode Series

IDW60C65D1
EmitterControlledDiodeRapid1CommonCathodeSeries
Switching Characteristics (per leg), Inductive Load
Parameter
Symbol Conditions
Diode Characteristic, at Tvj = 25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=25°C,
VR=400V,
IF=30.0A,
diF/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IGW50N65H5.
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=25°C,
VR=400V,
IF=30.0A,
diF/dt=200A/µs,
Lσ=30nH,
Cσ=40pF,
switch IGW50N65H5.
Value
Unit
min. typ. max.
-
66
- ns
- 0.73 - µC
- 16.8 - A
- -1370 - A/µs
- 115 - ns
- 0.45 - µC
- 5.4 - A
- -660 - A/µs
Switching Characteristics (per leg), Inductive Load
Parameter
Symbol Conditions
Diode Characteristic, at Tvj = 175°C/125°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=175°C,
VR=400V,
IF=30.0A,
diF/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IGW50N65H5.
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=125°C,
VR=400V,
IF=30.0A,
diF/dt=200A/µs,
Lσ=30nH,
Cσ=40pF,
switch IGW50N65H5.
Value
Unit
min. typ. max.
- 105 - ns
- 1.83 - µC
- 25.6 - A
- -1000 - A/µs
- 154 - ns
- 0.98 - µC
- 9.8 - A
- -490 - A/µs
5
Rev.2.1,2014-12-10