IDW30G65C5_12 Datasheet, PDF (5/11 Pages) Infineon Technologies AG – ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

5^th Generation thinQ!^TM SiC Schottky Diode
IDW30G65C5
Electrical characteristics
4
Electrical characteristics
Table 5
Parameter
Static characteristics
Symbol
DC blocking voltage
V_DC
Diode forward voltage
V_F
Reverse current
I_R
Min.
650
–
–
–
–
–
Values
Typ.
–
1.5
1.8
1.6
0.4
6.1
Max.
–
1.7
2.1
220
110
1500
Unit
V
µA
Note/Test Condition
I_R= 0.22 mA, T_j = 25°C
I_F= 30 A, T_j=25°C
I_F= 30 A, T_j=150°C
V_R=650 V, T_j=25°C
V_R=600 V, T_j=25°C
V_R=650 V, T_j=150°C
Table 6
Parameter
AC characteristics
Symbol
Total capacitive charge
Q_c
Total Capacitance
C
Min.
–
–
–
–
Values
Typ.
42
860
111
110
Max.
–
–
–
Unit Note/Test Condition
nC
V_R=400 V, di/dt=200A/µs,
I_F≤I_F,MAX, T_j=150°C.
V_R=1 V, f=1 MHz
pF V_R=300 V, f=1 MHz
V_R=600 V, f=1 MHz
Final Data Sheet
5
Rev. 2.2, 2013-01-15