IDL10G65C5_13 Datasheet, PDF (5/11 Pages) Infineon Technologies AG – Silicon Carbide Diode

5^th Generation thinQ!^TM SiC Schottky Diode
IDL10G65C5
Electrical characteristics
4
Electrical characteristics
Table 5
Parameter
Static characteristics
Symbol
DC blocking voltage
V_DC
Diode forward voltage
V_F
Reverse current
I_R
Min.
650
–
–
–
–
–
Values
Typ.
–
1.5
1.8
0.5
0.13
2.0
Max.
–
1.7
2.1
180
64
1250
Unit
V
µA
Note/Test Condition
I_R= 0.18 mA, T_j=25°C
I_F= 10 A, T_j=25°C
I_F= 10 A, T_j=150°C
V_R=650 V, T_j=25°C
V_R=600 V, T_j=25°C
V_R=650 V, T_j=150°C
Table 6
Parameter
AC characteristics
Symbol
Total capacitive charge
Q_c
Total Capacitance
C
Min.
–
–
–
–
Values
Typ.
15
300
40
39
Max.
–
–
–
Unit Note/Test Condition
nC
V_R=400 V, di/dt=200A/µs,
I_F≤I_F,MAX, T_j=150°C.
V_R=1 V, f=1 MHz
pF V_R=300 V, f=1 MHz
V_R=600 V, f=1 MHz
Final Data Sheet
5
Rev. 2.0, 2013-12-05