IDB23E60_07 Datasheet, PDF (5/8 Pages) Infineon Technologies AG – Fast Switching EmCon Diode

5 Typ. reverse recovery time
t_rr = f (di_F/dt)
parameter: V_R = 400V, T_j = 125°C
500
ns
400
46A
23A
350
11.5A
300
250
200
150
100
200 300 400 500 600 700 800 _A/µs 1000
di_F/dt
7 Typ. reverse recovery current
I_rr = f (di_F/dt)
parameter: V_R = 400V, T_j = 125°C
24
A
IDB23E60
6 Typ. reverse recovery charge
Q_rr=f(di_F/dt)
parameter: V_R = 400V, T_j = 125 °C
2100
nC
46A
1900
1800
1700
23A
1600
1500
1400
1300
1200
1100
1000
11.5A
900
800
200 300 400 500 600 700 800 _A/µs 1000
di_F/dt
8 Typ. reverse recovery softness factor
S = f(di_F/dt)
parameter: V_R = 400V, T_j = 125°C
13
20
46A
23A
18
11.5A
16
14
11
10
46A
9
23A
11.5A
8
12
7
10
6
8
5
6
4
4
200 300 400 500 600 700 800 _A/µs 1000
di_F/dt
3
200 300 400 500 600 700 800 _A/µs 1000
di_F/dt
Rev.2.2
Page 5
2007-09-01