IDB06E60_07 Datasheet, PDF (5/8 Pages) Infineon Technologies AG – Fast Switching EmCon Diode

IDB06E60
5 Typ. reverse recovery time
t_rr = f (di_F/dt)
parameter: V_R = 400V, T_j = 125°C
300
ns
12A
6A
200
3A
150
100
50
0
200 300 400 500 600 _A/µs 800
di_F/dt
7 Typ. reverse recovery current
I_rr = f (di_F/dt)
parameter: V_R = 400V, T_j = 125°C
11
A
9
12A
6A
3A
8
7
6
5
4
3
200 300 400 500 600 _A/µs 800
di_F/dt
6 Typ. reverse recovery charge
Q_rr=f(di_F/dt)
parameter: V_R = 400V, T_j = 125 °C
550
nC
12A
500
475
450
425
400
375
6A
350
325
300
3A
275
250
200 300 400 500 600 _A/µs 800
di_F/dt
8 Typ. reverse recovery softness factor
S = f(di_F/dt)
parameter: V_R = 400V, T_j = 125°C
11
9
12A
8
6A
3A
7
6
5
4
3
2
1
0
200 300 400 500 600 700 800 _A/µs 1000
di_F/dt
Rev.2.2
Page 5
2007-09-01