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BTS721L1 Datasheet, PDF (5/15 Pages) Siemens Semiconductor Group – Smart Four Channel Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown)
BTS721L1
Parameter and Conditions, each of the four channels Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Leakage output current (included in Ibb(off))
VIN = 0
Operating current 9), VIN = 5V, Tj =-40...+150°C
IGND = IGND1/2 + IGND3/4,
one channel on:
four channels on:
IL(off)
IGND
Values
Unit
min typ max
--
-- 12 µA
--
2
3 mA
--
8 12
Protection Functions10)
Initial peak short circuit current limit, (see timing
diagrams, page 12)
each channel, Tj =-40°C: IL(SCp)
11 18 25 A
Tj =25°C:
9 14 22
Tj =+150°C:
5
8 14
two parallel channels
twice the current of one channel
four parallel channels four times the current of one channel
Repetitive short circuit current limit,
Tj = Tjt
each channel IL(SCr)
two parallel channels
four parallel channels
--
8
-- A
--
8
--
--
8
--
(see timing diagrams, page 12)
Initial short circuit shutdown time
Tj,start =-40°C: toff(SC)
Tj,start = 25°C:
-- 3.8
--
3
-- ms
--
(see page 12 and timing diagrams on page 12)
Output clamp (inductive load switch off)11)
at VON(CL) = Vbb - VOUT
Thermal overload trip temperature
Thermal hysteresis
VON(CL)
Tjt
∆Tjt
-- 47
150
--
-- 10
-- V
-- °C
-- K
Reverse Battery
Reverse battery voltage 12)
Drain-source diode voltage (Vout > Vbb)
IL = - 2.9 A, Tj = +150°C
-Vbb
-VON
--
--
-- 610
32 V
-- mV
9) Add IST, if IST > 0
10) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
11) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
VON(CL)
12) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 3 and circuit page 8).
Semiconductor Group
5
2003-Oct-01