BSZ031NE2LS5_15 Datasheet, PDF (5/12 Pages) Infineon Technologies AG – Metal Oxide Semiconductor Field Effect Transistor

OptiMOS^TM5Power-MOSFET,25V
BSZ031NE2LS5
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
RG
gfs
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance¹⁾
Ciss
Output capacitance¹⁾
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
25
1.2
-
-
-
-
-
-
46
Values
Typ. Max.
-
-
-
2
0.1 1
10 100
10 100
3.2 3.9
2.6 3.1
0.75 1.2
93 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V
VDS=VGS,ID=250µA
µA
VDS=20V,VGS=0V,Tj=25°C
VDS=20V,VGS=0V,Tj=125°C
nA VGS=20V,VDS=0V
mΩ
VGS=4.5V,ID=20A
VGS=10V,ID=20A
Ω-
S
|VDS|>2|ID|RDS(on)max,ID=20A
Min.
-
-
-
-
-
-
-
Values
Typ. Max.
910 1230
390 530
38 -
3
-
3
-
15 -
2
-
Unit Note/TestCondition
pF VGS=0V,VDS=12V,f=1MHz
pF VGS=0V,VDS=12V,f=1MHz
pF VGS=0V,VDS=12V,f=1MHz
ns
VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6Ω
ns
VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6Ω
ns
VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6Ω
ns
VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6Ω
1) _{Defined by design. Not subject to producction test}
Final Data Sheet
5
Rev.2.0,2015-08-06