BSF035NE2LQ Datasheet, PDF (5/11 Pages) Infineon Technologies AG – OptiMOSTM Power-MOSFET

5 Typ. output characteristics
I _D=f(V _DS); T _j=25 °C
parameter: V _GS
300
250
10 V
4.5 V
4V
200
150
100
BSF035NE2LQ
6 Typ. drain-source on resistance
R _DS(on)=f(I _D); T _j=25 °C
parameter: V _GS
6
3.2 V
3V
2.8 V
5
3.2 V
3.5 V
4
4V
4.5 V
5V
7V
3
10 V
2
50
1
0
0
1
2
V_DS [V]
7 Typ. transfer characteristics
I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max
parameter: T _j
300
0
3
0
10
20
30
40
50
I_D [A]
8 Typ. forward transconductance
g _fs=f(I _D); T _j=25 °C
200
250
160
200
120
150
80
100
150 °C
25 °C
40
50
0
0
0
1
2
3
4
5
0
V_GS [V]
Rev. 1.3
page 5
20
40
60
80
I_D [A]
2013-09-20