BSC118N10NSG Datasheet, PDF (5/10 Pages) Infineon Technologies AG – OptiMOS™2 Power-Transistor

5 Typ. output characteristics
I _D=f(V _DS); T _j=25 °C
parameter: V _GS
160
10 V
BSC118N10NS G
6 Typ. drain-source on resistance
R _DS(on)=f(I _D); T _j=25 °C
parameter: V _GS
25
7V
120
6V
80
20
5V
5.5 V
6V
15
7V
5.5 V
40
5V
10
10 V
5
4.5 V
0
0
0
1
2
3
4
5
0
V _DS [V]
50
100
150
I _D [A]
7 Typ. transfer characteristics
I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max
parameter: T _j
160
8 Typ. forward transconductance
g _fs=f(I _D); T _j=25 °C
120
120
80
40
0
0
Rev. 1.08
150 °C
25 °C
2
4
6
V _GS [V]
80
40
0
8
0
page 5
20
40
60
80 100 120
I _D [A]
2009-11-03