BSC106N025S Datasheet, PDF (5/10 Pages) Infineon Technologies AG – OptiMOS®2 Power-Transistor

5 Typ. output characteristics
I _D=f(V _DS); T _j=25 °C
parameter: V _GS
60
10 V
4.5 V
50
BSC106N025S G
6 Typ. drain-source on resistance
R _DS(on)=f(I _D); T _j=25 °C
parameter: V _GS
35
3.4 V
3.7 V
4V
30
25
40
4V
20
30
3.7 V
15
20
3.4 V
10
10
0
0
3.2 V
5
3V
2.8 V
0
1
2
3
0
V _DS [V]
20
40
I _D [A]
7 Typ. transfer characteristics
I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max
parameter: T _j
60
8 Typ. forward transconductance
g _fs=f(I _D); T _j=25 °C
60
4.5 V
10 V
60
50
50
40
40
30
30
20
20
10
150 °C
25 °C
0
0
1
2
3
4
5
V _GS [V]
10
0
0
Rev. 0.94
page 5
20
40
I _D [A]
60
2006-05-10