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BSC090N03MSG_13 Datasheet, PDF (5/10 Pages) Infineon Technologies AG – OptiMOS™3 M-Series Power-MOSFET
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
100
5V
4.5 V
80
10 V
60
40
20
0
0
1
2
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
120
BSC090N03MS G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
16
3V
3.2 V
4V
12
8
3.5 V
3.5 V
4V
4.5 V
5V
6V
10 V
3.2 V
4
3V
2.8 V
0
3
0
10
20
30
40
50
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
120
100
100
80
80
60
60
40
40
20
150 °C
25 °C
0
0
1
2
3
4
5
VGS [V]
20
0
0
Rev. 2.1
page 5
40
80
120
160
ID [A]
2013-05-17