BSC090N03LSG Datasheet, PDF (5/10 Pages) Infineon Technologies AG – OptiMOS™3 Power-MOSFET

5 Typ. output characteristics
I _D=f(V _DS); T _j=25 °C
parameter: V _GS
200
10 V
150
BSC090N03LS G
6 Typ. drain-source on resistance
R _DS(on)=f(I _D); T _j=25 °C
parameter: V _GS
24
3.2 V
5V
20
3.5 V
16
100
4.5 V
12
50
0
0
1
2
V _DS [V]
7 Typ. transfer characteristics
I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max
parameter: T _j
120
4V
8
3.5 V
3.2 V
3V
2.8 V
3
4
0
0
10
20
30
I _D [A]
8 Typ. forward transconductance
g _fs=f(I _D); T _j=25 °C
140
4V
4.5 V
5V
10 V
11.5 V
40
50
100
120
100
80
80
60
60
40
40
20
150 °C
20
25 °C
0
0
0
1
2
3
4
5
0
V _GS [V]
Rev. 1.6
page 5
40
80
120
160
I _D [A]
2009-11-03