BSC079N03S Datasheet, PDF (5/10 Pages) Infineon Technologies AG – OptiMOS 2 Power-Transistor

5 Typ. output characteristics
I _D=f(V _DS); T _j=25 °C
parameter: V _GS
80
10 V 4.5 V
70
60
50
BSC079N03S G
6 Typ. drain-source on resistance
R _DS(on)=f(I _D); T _j=25 °C
parameter: V _GS
30
2.8 V ^{3 V}
3.2 V
3.4 V
3.7 V
4V
25
20
3.7 V
40
15
30
20
10
0
0
1
2
V _DS [V]
7 Typ. transfer characteristics
I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max
parameter: T _j
80
3.4 V
10
3.2 V
3V
2.8 V
3
5
0
0
10
20
30
I _D [A]
8 Typ. forward transconductance
g _fs=f(I _D); T _j=25 °C
80
4V
4.5 V
10 V
40
50
70
70
60
60
50
50
40
40
30
30
20
20
150 °C
25 °C
10
10
0
0
1
2
3
4
5
V _GS [V]
0
0
10
20
30
40
50
60
I _D [A]
Rev. 1.01
page 5
2004-12-15