BSC066N06NS Datasheet, PDF (5/10 Pages) Infineon Technologies AG – OptiMOSTM Power-Transistor

5 Typ. output characteristics
I _D=f(V _DS); T _j=25 °C
parameter: V _GS
250
200
10 V
7V
150
BSC066N06NS
6 Typ. drain-source on resistance
R _DS(on)=f(I _D); T _j=25 °C
parameter: V _GS
15
5V
12
5.5 V
6V
9
7V
100
50
0
0.0
0.5
1.0
V_DS [V]
7 Typ. transfer characteristics
I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max
parameter: T _j
250
6V
6
10 V
5.5 V
3
5V
1.5
2.0
0
0
50
100
150
200
250
I_D [A]
8 Typ. forward transconductance
g _fs=f(I _D); T _j=25 °C
120
200
80
150
100
50
0
0
Rev.2.0
150 °C
25 °C
2
4
6
V_GS [V]
40
0
8
0
page 5
20
40
60
80
100
I_D [A]
2013-10-17