BSC042N03MSG_13 Datasheet, PDF (5/10 Pages) Infineon Technologies AG – OptiMOS™3 Power-MOSFET

5 Typ. output characteristics
I _D=f(V _DS); T _j=25 °C
parameter: V _GS
BSC042N03MS G
6 Typ. drain-source on resistance
R _DS(on)=f(I _D); T _j=25 °C
parameter: V _GS
300
5V
250
10 V
200
150
4.5 V
4V
8
3V
6
4
3.2 V
3.5 V
4V
4.5 V
5V
6V
100
50
0
0
1
2
V_DS [V]
3.5 V
3.2 V
3V
2.8 V
3
10 V
2
0
0
10
20
30
40
50
I_D [A]
7 Typ. transfer characteristics
I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max
parameter: T _j
200
8 Typ. forward transconductance
g _fs=f(I _D); T _j=25 °C
200
160
160
120
120
80
80
40
150 °C
25 °C
0
0
1
2
3
4
5
V_GS [V]
40
0
0
Rev. 2.1
page 5
40
80
120
160
I_D [A]
2013-05-17