BSC030N08NS5 Datasheet, PDF (5/12 Pages) Infineon Technologies AG – Superior thermal resistance

OptiMOS^TM5Power-Transistor,80V
BSC030N08NS5
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance¹⁾
Transconductance
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
RG
gfs
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance¹⁾
Ciss
Output capacitance¹⁾
Coss
Reverse transfer capacitance¹⁾
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
80
2.2
-
-
-
-
-
-
55
Values
Typ. Max.
-
-
3
3.8
0.1 1
10 100
10 100
2.6 3.0
3.4 4.5
1.6 2.4
110 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V
VDS=VGS,ID=95µA
µA
VDS=80V,VGS=0V,Tj=25°C
VDS=80V,VGS=0V,Tj=125°C
nA VGS=20V,VDS=0V
mΩ
VGS=10V,ID=50A
VGS=6V,ID=25A
Ω-
S
|VDS|>2|ID|RDS(on)max,ID=50A
Min.
-
-
-
-
-
-
-
Values
Typ. Max.
4300 5600
700 910
32 56
20 -
12 -
43 -
13 -
Unit Note/TestCondition
pF VGS=0V,VDS=40V,f=1MHz
pF VGS=0V,VDS=40V,f=1MHz
pF VGS=0V,VDS=40V,f=1MHz
ns
VDD=40V,VGS=10V,ID=50A,
RG,ext=3Ω
ns
VDD=40V,VGS=10V,ID=50A,
RG,ext=3Ω
ns
VDD=40V,VGS=10V,ID=50A,
RG,ext=3Ω
ns
VDD=40V,VGS=10V,ID=50A,
RG,ext=3Ω
1) _{Defined by design. Not subject to production test.}
Final Data Sheet
5
Rev.2.2,2014-11-10