BSC027N03SG Datasheet, PDF (5/10 Pages) Infineon Technologies AG – OptiMOS2 Power-Transistor

5 Typ. output characteristics
I _D=f(V _DS); T _j=25 °C
parameter: V _GS
200
10 V
4V
160
4.5 V
120
80
40
0
0
1
2
V _DS [V]
7 Typ. transfer characteristics
I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max
parameter: T _j
200
BSC027N03S G
6 Typ. drain-source on resistance
R _DS(on)=f(I _D); T _j=25 °C
parameter: V _GS
10
3V
3.2 V
3.4 V
8
3.7 V
6
3.4 V
4
3.2 V
3V
2
2.8 V
0
3
0
50
I _D [A]
8 Typ. forward transconductance
g _fs=f(I _D); T _j=25 °C
3.7 V
4V
4.5 V
10 V
100
160
160
120
120
80
80
40
40
150 °C
25 °C
0
0
0
1
2
3
4
5
0
V _GS [V]
Rev. 1.4
page 5
25
50
I _D [A]
75
2009-10-22