BSC020N03LS Datasheet, PDF (5/10 Pages) Infineon Technologies AG – OptiMOS™3 Power-MOSFET

5 Typ. output characteristics
I _D=f(V _DS); T _j=25 °C
parameter: V _GS
300
250
10 V
200
5V
4.5 V
4V
150
100
50
0
0
1
2
V _DS [V]
7 Typ. transfer characteristics
I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max
parameter: T _j
200
BSC020N03LS G
6 Typ. drain-source on resistance
R _DS(on)=f(I _D); T _j=25 °C
parameter: V _GS
5
3.2 V
4
3
3.5 V
2
3.2 V
3V
2.8 V
3
1
0
0
10
20
30
I _D [A]
8 Typ. forward transconductance
g _fs=f(I _D); T _j=25 °C
3.5 V
4V
4.5 V
5V
10 V
11.5 V
40
50
300
250
160
200
120
150
80
100
40
150 °C
25 °C
50
0
0
0
1
2
3
4
5
0
V _GS [V]
Rev. 1.27
page 5
40
80
120
160
I _D [A]
2009-10-22