BSC010NE2LSI Datasheet, PDF (5/12 Pages) Infineon Technologies AG – n-Channel Power MOSFET

OptiMOS™ Power-MOSFET
BSC010NE2LSI
Electrical characteristics
Table 6 Gate charge characteristics¹⁾
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Q_gs
Q_g(th)
Q_gd
Q_sw
Q_g
V_plateau
Q_g
Min.
-
-
-
-
-
-
-
Gate charge total, sync. FET
Q_g(sync)
-
Output charge
Q_oss
-
1) See figure 16 for gate charge parameter definition
Values
Typ.
10
6.7
6.9
10
29
2.4
59
Max.
-
-
-
-
-
-
-
25
-
38
-
Unit
nC
Note /
Test Condition
V_DD=12 V,
I_D=30 A,
V_GS=0 to 4.5 V
V
nC V_DD=12 V,
I_D=30 A,
V_GS=0 to 10V
V_DS=0.1 V,
V_GS=0 to 4.5 V
V_DD=12 V, V_GS=0 V
Table 7 Reverse diode characteristics
Parameter
Symbol
Diode continuous forward current
Diode pulse current
Diode forward voltage
I_s
I_S,pulse
V_SD
Min.
-
-
-
Reverse recovery charge
Q_rr
-
Values
Typ.
-
-
0.56
Max.
96
400
0.7
5
-
Unit Note /
Test Condition
A
T_C=25 °C
V
V_GS=0 V, I_F=12 A,
T_j=25 °C
nC V_R=15 V, I_F=I_s,
di_F/dt=400 A/µs
Final Data Sheet
4
2.1, 2011-09-08