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BFP460_10 Datasheet, PDF (5/11 Pages) Infineon Technologies AG – NPN Silicon RF Transistor | |||
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Total power dissipation Ptot = Æ(TS)
BFP460
Collector-base capacitance Ccb= Æ(VCB)
f = 1MHz
260
V
220
200
180
160
140
120
100
80
60
40
20
0
0 15 30 45 60 75 90 105 120 A 150
Third order Intercept Point IP3=Æ(IC)
(Output, ZS=ZL=50â¦)
VCE = parameter, f = 1800MHz
33
dBm
4V
29
27
3V
25
23
2V
21
19
17
15
13
1V
11
9
7
5
0
10
20
30
40 mA 55
IC
0.7
pF
0.5
0.4
0.3
0.2
0.1
0
0
2
4
6
8 10 V
14
VCB
Transition frequency fT= Æ(IC)
f = 1 GHz
VCE = parameter
24
GHz
3-4V
2V
20
18
1V
16
14
12
10
8
6
4
0
10
20
30
40 mA
60
IC
2010-05-17
5
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