BFP405_13 Datasheet, PDF (5/9 Pages) Infineon Technologies AG – Low Noise Silicon Bipolar RF Transistor

Transition frequency f_T = ƒ(I_C)
f = 2 GHz
V_CE = parameter in V
26
GHz
22
20
18
4V
3V
2V
1.5V
16
1V
14
12
10
8
0.5V
6
4
0
4
8
12
16 mA 22
I_C
Power gain G_ma, G_ms = ƒ (I_C)
V_CE = 3V
f = parameter in GHz
40
dB
0.15GHz
32
0.45GHz
28
0.9GHz
1.5GHz
24
1.9GHz
20
2.4GHz
16
3.5GHz
12
5.5GHz
8
10GHz
4
0
0
4
8
12 16 20 mA 26
I_C
BFP405
Power gain G_ma, G_ms, |S₂₁|² = ƒ (f)
V_CE = 3 V, I_C = 5 mA
44
dB
36
32
28
Gms
24
20
16
|S21|²
12
Gma
8
4
0
0 1 2 3 4 5 6 7 8 GHz 10
f
Power gain G_ma, G_ms = ƒ (V_CE)
I_C = 5 mA
f = parameter in GHz
40
dB
0.15GHz
32
0.45GHz
28
0.9GHz
1.5GHz
24
2.4GHz
20
3.5GHz
16
5.5GHz
12
8
10GHz
4
0
0
1
2
3
4
V
6
V_CE
5
2013-09-19