BCV28 Datasheet, PDF (5/5 Pages) NXP Semiconductors – PNP Darlington transistors

BCV28, BCV48
Collector-emitter saturation voltage
I_C = f (V_CEsat), h_FE = 1000
10 ^{3 BCV 28/48}
Ι _C ^mA
10 ²
5
EHP00313
150 ˚C
25 ˚C
-50 ˚C
Base-emitter saturation voltage
I_C = f (V_BEsat), h_FE = 1000
10 ^{3 BCV 28/48}
Ι _{C mA}
10 ²
5
EHP00314
150 ˚C
25 ˚C
-50 ˚C
10 ¹
10 ¹
5
5
10 ⁰
0
0.5
1.0 V 1.5
10 ⁰
0
V _CEsat
1.0
2.0 V 3.0
V _BEsat
Collector-base capacitance C_CB = f (V_CBO) DC current gain h_FE = f (I_C)
Emitter-base capacitance C_EB = f (V_EBO) V_CE = 5V
10 ^{BCV 28/48}
C_EB0
(C_CB0 )
pF
5
EHP00315
C_CB0
C_EB0
10 ^{6 BCV 28/48}
5
h _FE
125 ˚C
10 ⁵
25 ˚C
5
-55 ˚C
10 ⁴
5
EHP00316
0
10 ^-1
10 ⁰
V 10¹
10 ³
10 ^-1
10 ⁰
10 ¹
10 ² mA 10 ³
V_EB0 (V_CB0 )
Ι_C
5
Jul-12-2001