 English |
|
|
|
|
|
|
|
| BCV27 Datasheet, PDF (5/5 Pages) NXP Semiconductors – NPN Darlington transistors | |||
| |||
| ◁ |
BCV27, BCV47
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 1000
10 3 BCV 27/47
Î C mA
10 2
5
EHP00304
150 ËC
25 ËC
-50 ËC
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 1000
10 3 BCV 27/47
Î C mA
10 2
5
EHP00305
150 ËC
25 ËC
-50 ËC
10 1
10 1
5
5
10 0
0
1.0
2.0 V 3.0
V BEsat
Collector cutoff current ICBO = f (TA)
VCB = VCEmax
10 0
0
0.5
1.0 V 1.5
V CEsat
DC current gain hFE = f (IC)
VCE = 5V
10 4 BCV 27/47
nA
Î CBO
10 3
10 2
10 1
max
typ
EHP00306
10 6 BCV 27/47
h FE 5
125 ËC
10 5
25 ËC
5
-55 ËC
10 4
5
EHP00307
10 0
0
10 3
50
100 ËC 150
10 -1
10 0
10 1
10 2 mA 10 3
TA
ÎC
5
Jul-12-2001
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese