BC817K-40E6327 Datasheet, PDF (5/11 Pages) Infineon Technologies AG – NPN Silicon AF Transistor

DC current gain h_FE = ƒ(I_C)
V_CE = 1 V
h_FE-grp.16
10 ³
BC817K.../BC818K...
DC current gain h_FE = ƒ(I_C)
V_CE = 1 V
h_FE-grp.25
10 ³
10 ²
10 ²
10
1
10
-5
105 °C
85 °C
65 °C
25 °C
-40 °C
10 ^-4
10 ^-3
10 ^-2
DC current gain h_FE = ƒ(I_C)
V_CE = 1 V
h_FE-grp.40
10 ³
10 ^-1 _A 10 ⁰
I_C
105 °C
85 °C
65 °C
25 °C
-40 °C
10
1
10
-5
10 ^-4
10 ^-3
10 ^-2
10 ^-1 _A 10 ⁰
I_C
Collector-emitter saturation voltage
I_C = ƒ(V_CEsat), h_FE = 10
10 ^{3 BC 817/818}
mA
Ι_C
10 ²
5
150 ˚C
25 ˚C
-50 ˚C
EHP00223
10 ²
10 ¹
105 °C
5
85 °C
65 °C
25 °C
-40 °C
10 ⁰
5
10
1
10
-5
10 ^-4
10 ^-3
10 ^-2
10 ^-1 _A 10 ⁰
I_C
10 ^-1
0
0.2
0.4
0.6 V 0.8
V_CEsat
5
2011-09-19