BC817 Datasheet, PDF (5/5 Pages) NXP Semiconductors – NPN general purpose transistor

BC817, BC818
Base-emitter saturation voltage
I_C = f(V_BEsat), h_FE = 10
Collector-emitter saturation voltage
I_C = f (V_CEsat), h_FE = 10
10 ^{3 BC 817/818}
mA
Ι_C
10 ²
5
150 ˚C
25 ˚C
-50 ˚C
EHP00222
10 ^{3 BC 817/818}
mA
Ι_C
10 ²
5
150 ˚C
25 ˚C
-50 ˚C
EHP00223
10 ¹
10 ¹
5
5
10 ⁰
10 ⁰
5
5
10 ^-1
0
1.0
2.0
DC current gain h_FE = f(IC)
V_CE = 1V
3.0 V 4.0
V _BEsat
10 ^{3 BC 817/818}
h _FE ⁵ _{100 ˚C}
25 ˚C
-50 ˚C
10 ²
5
EHP00224
10 ^-1
0
0.2
0.4
0.6 V 0.8
V_CEsat
10 ¹
5
10 ⁰
10 ^-1
10 ⁰
10 ¹
10 ² mA 10 ³
Ι_C
5
Nov-29-2001