AUIRF7647S2TR Datasheet, PDF (5/11 Pages) International Rectifier – DirectFET Power MOSFET

6.0
5.5
5.0
4.5
4.0
3.5 _{ID = 50µA}
3.0 ID = 250µA
2.5 ^{ID = 1.0mA}
ID = 1.0A
2.0
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig. 7 Typical Threshold Voltage vs.
Junction Temperature
40
TJ = 25°C
30
20
10
0
0
TJ = 175°C
VDS = 5.0V
380µs PULSE WIDTH
5
10 15 20 25 30
ID,Drain-to-Source Current (A)
Fig 9. Typical Forward Trans conductance vs. Drain Current
14.0
ID= 14A
12.0
VDS= 80V
VDS= 50V
10.0
VDS= 20V
8.0
6.0
4.0
2.0
0.0
0 2 4 6 8 10 12 14 16 18 20
QG, Total Gate Charge (nC)
Fig 11. Typical Gate Charge vs.
Gate-to-Source Voltage
5
AUIRF7647S2TR
1000
100
TJ = -40°C
TJ = 25°C
TJ = 175°C
10
1
0.1
0.2
VGS = 0V
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Fig 8. Typical Source-Drain Diode Forward Voltage
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
100
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Capacitance vs. Drain-to-Source Voltage
25
20
15
10
5
0
25
50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
2015-9-30