XMC1200 Datasheet, PDF (41/65 Pages) Infineon Technologies AG – Microcontroller Series

3.2.7 Flash Memory Parameters
XMC1200
XMC1000 Family
Electrical Parameter
Note: These parameters are not subject to production test, but verified by design and/or
characterization.
Table 18 Flash Memory Parameters
Parameter
Symbol
Values
Unit Note /
Min. Typ. Max.
Test Condition
Erase Time per page t_ERASE CC 6.8 7.1 7.6 ms
Program time per block t_PSER CC
102 152 204 μs
Wake-Up time
t_WU CC
−
32.2 −
μs
Read time per word t_a CC
−
50 −
ns
Data Retention Time t_RET CC
10 − −
years Max. 100 erase /
program cycles
Flash Wait States ¹⁾
N_WSFLASH CC 0
0.5 −
f_MCLK = 8 MHz
0
1.4 −
f_MCLK = 16 MHz
1
Erase Cycles per page N_ECYC CC −
Total Erase Cycles
N_TECYC CC −
1.9 −
f_MCLK = 32 MHz
− 5*10⁴ cycles
− 2*10⁶ cycles
1) Flash wait states are automatically inserted by the Flash module during memory read when needed. Typical
values are calculated from the execution of the Dhrystone benchmark program.
Data Sheet
41
V1.4, 2014-05
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