TLE4976-1H Datasheet, PDF (4/9 Pages) Infineon Technologies AG – High Precision Hall-Effect Switch

TLE4976-1H
Absolute Maximum Ratings
Tj = -40 to 150°C
Parameter
Symbol min. max. Unit Conditions
Supply Voltage
Supply Current through
V_S
-18
18
V
-18
24
for 1h (R_S+R_L > 75 Ohm)
-18
26
for 5min (R_S+R_L > 75 Ohm)
Is
-50 +50 mA
protection device
Junction Temperature
T_j
-
155 °C for 2000 h (not additive)
165
for 1000 h (not additive)
175
for 168 h (not additive)
195
for 3x1 h (additive)
Storage Temperature
Magnetic Flux Density
T_S
-40 150 °C
B
- unlimit. mT
Note: Stresses above those listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ESD Protection
Human Body Model (HBM) tests according to:
EOS/ESD Association Standard S5.1-1993 and Mil. Std. 883D method 3015.7
Parameter
ESD Voltage
Symbol
V_ESD
max.
±8
Unit Conditions
kV HBM, R= 1.500 Ohm,
C= 100pF; T_A = 25°C
Operating Range
Parameter
Supply Voltage
Junction Temperature
Symbol min. typ. max. Unit Conditions
V_S
3.0
-
18
V
3.0
24
for 5min (R_S+R_L > 100 Ohm)
T_j
-40
-
150 °C
175
for 168 h
Data Sheet
4/9
2003-11-20