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| SPB08P06P_12 Datasheet, PDF (4/8 Pages) Infineon Technologies AG – SIPMOS® Power-Transistor | |||
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1 Power dissipation
P tot=f(T A)
50
2 Drain current
I D=f(T A); |V GS|â¥10 V
10
SPB08P06P G
40
8
30
6
20
4
10
2
0
0
0
40
80
120
160
0
40
80
120
160
T A [°C]
T A [°C]
3 Safe operating area
I D=f(V DS); T A=25 °C; D =0
parameter: t p
102
limited by on-state
resistance
101
100
10-1
10 µs
100 µs
1 ms
10 ms
100 ms
DC
4 Max. transient thermal impedance
Z thJA=f(t p)
parameter: D =t p/T
101
0.5
100 0.2
0.1
0.05
0.02
0.01
10-1
single pulse
10-5 10-4 10-3 10-2 10-1 100 101 102
10-2
10-1
Rev 1.7
100
101
-V DS [V]
102
page 4
t p [s]
2012-09-07
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